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This volume provides a timely description of the latest compact Mos transistor models for circuit simulation The first generation Bsim3 and Bsim4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub100nm Mos transistors This book discusses the second generation Mos transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications It considers how the models are to include the complete driftdiffusion theory using the surface potential variable in the Mos transistor channel in order to give one characterization equation
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Find tips, reviews, and features on Physics and Modeling of Mosfets sold for 74.34 $ , available in the Books & Magazines category; this product belongs to and is sold by Abebooks.com.
This volume provides a timely description of the latest compact Mos transistor models for circuit simulation The first generation Bsim3 and Bsim4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub100nm Mos transistors This book discusses the second generation Mos transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications It considers how the models are to include the complete driftdiffusion theory using the surface potential variable in the Mos transistor channel in order to give one characterization equation
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To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale a clear understanding of device physics at nanometer scale is necessary Nanoscale Transistors provides a description on the recent development of theory modeling and simulation of nanotransistors for electrical engineers physicists and chemists working on nanoscale devices Simple physical pictures and semianalytical models which were validated by detailed numerical simulations are provided for both evolutionary and revolutionary nanotransistors After basic concepts are reviewed the text summarizes the essentials of traditional semiconductor devices digital circuits and systems to supply a baseline against which new devices can be assessed A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors This practical guide then explore the limits of devices by discussing conduction in single molecules
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